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Novel Periodic Nanoporous Silicate Glass With High Structural Stability as Low-k Thin Film

Published online by Cambridge University Press:  01 February 2011

Yoshiaki Oku
Affiliation:
MIRAI Project, Association of Super-Advanced Electronics Technology, AIST Tsukuba, Ibaraki 305-8568, Japan
Norikazu Nishiyama
Affiliation:
Division of Chemical Engineering, Graduate School of Engineering Science, Osaka University, Osaka 560-8531, Japan
Shunsuke Tanaka
Affiliation:
Division of Chemical Engineering, Graduate School of Engineering Science, Osaka University, Osaka 560-8531, Japan
Korekazu Ueyama
Affiliation:
Division of Chemical Engineering, Graduate School of Engineering Science, Osaka University, Osaka 560-8531, Japan
Nobuhiro Hata
Affiliation:
MIRAI Project, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology, AIST Tsukuba, Ibaraki 305-8568, Japan
Takamaro Kikkawa
Affiliation:
MIRAI Project, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology, AIST Tsukuba, Ibaraki 305-8568, Japan Research Center for Nanodevices and Systems, Hiroshima University, Hiroshima 739-8527, Japan
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Abstract

We have recently developed novel periodic nanoporous silicate glass with high structural stability as low-k thin film by spin-coating method. Periodic porous silicate glass films developed so far cause structural shrinkage (10>∼20% or more) by annealing the spin-coated films. In this investigation we adopt vapor-phase TEOS (tetraethoxysilane)-treatment before anneal. Our novel nanoporous film shows little shift of XRD peak position after annealed at 673K, indicating both the ultimate mechanical strength and the minimization of stress in the interface between the prepared film and the underlying substrate. Such a shrinkage-free periodic nanoporous silica film can possess higher VBD (break down voltage) and lower ILeak (leakage current). In this article we estimate structural properties (including information on pores introduced intentionally) by XRD and TEM observation, and electrical properties (dielectric constant, VBD and ILeak) by IV and CV measurement of this special-treated periodic nanoporous silica film. The dielectric constant of the thus prepared periodic porous silica film with silylation after calcination was evaluated to be around 1.8 at 100kHz.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

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