Hostname: page-component-cd4964975-8cclj Total loading time: 0 Render date: 2023-04-02T05:12:27.265Z Has data issue: true Feature Flags: { "useRatesEcommerce": false } hasContentIssue true

Quantifying the Role of Electronic Charge Trap States on Imprint Behavior in Ferroelectric Poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) Thin Films

Published online by Cambridge University Press:  01 February 2011

Connie Lew
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Michael O. Thompson
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Get access


Poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric thin films are a potentially promising material for sensors or non-volatile memories. Imprint, the time-dependent resistance to polarization reversal, is a key material property that limits applications and is poorly understood. Based on experimental time and temperature dependences, we propose and investigate the link between imprint and charge trap states. A novel fast-ramp thermally stimulated current (TSC) measurement was developed to quantify and characterize the traps in an appropriate time-frame.

Thin films of P(VDF-TrFE) on oxidized Si substrates were characterized following controlled initialization, fatigue, polarization, and imprint. Trap states were thermally filled/emptied by temperature cycling between 20–100 °C, using heating and cooling rates between 1 and 5 °C/s. Dynamics of this fast-ramp TSC indicate the presence of not only trap states, but also reversible and non-reversible charge accumulation. The presence of electrically active traps were verified by measurements over 1–10 s imprint times. Trapped charge directly correlated with the log of the imprint time, with a rate of ∼0.12 /μC/cm2/decade.

Research Article
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)



[1] Lovinger, A.J., Science 1, 1115 (1983).CrossRefGoogle Scholar
[2] Furukawa, T., Phase Transitions B18, 143 (1989).CrossRefGoogle Scholar
[3] Leistad, G.I., Gudesen, H.G., Patent No. WO2003081602A1 (2 Oct 2003).Google Scholar
[4] Gudesen, H.G., Nordal, P.E., Leistad, G., US Patent No. 6498744 (24 Dec 2002).Google Scholar
[5] Gudesen, H.G., Nordal, P.E., Leistad, G., Berggren, M., Gustafsson, G., Karlsson, J., US Patent No. 6541869 (1 Apr 2003).Google Scholar
[6] Nordal, P.E., Gudesen, H.G., Gustafsson, G., Leistad, G., Patent No. WO0169679A1 (20 Sep 2001).Google Scholar
[7] Warren, W.L., Tuttle, B.A., Dimos, D., Pike, G.E., Al-Shareef, H.N., Ramesh, R., Evans, J.T., Jpn. J. Appl. Phys. 35, 1521 (1996).CrossRefGoogle Scholar
[8] Grossmann, M., Lohse, O., Bolten, D., Boettger, U., Schneller, T., Waser, R., J. Appl. Phys. 92, 2680 (2002).CrossRefGoogle Scholar
[9] Ikeda, S., Fukada, T., Wada, Y., J. Appl. Phys. 64, 2026 (1988).CrossRefGoogle Scholar
[10] Pillai, P.K.C., in Ferroelectric Polymers, edited by Nalwa, H.S. (Marcel Dekker, Inc., NY, 1995), p. 19.Google Scholar
[11] Vanderschueren, J., Gasiot, J., in Thermally Stimulated Relaxation in Solids, edited by Braunlich, P. (Springer-Verlag, Berlin, 1979), p. 135.CrossRefGoogle Scholar