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Transient Cooling of Ultrathin Epitaxial Bi(111)-Films on Si(111) Upon Femtosecond Laser Excitation Studied by Ultrafast Reflection High Energy Electron Diffraction

Published online by Cambridge University Press:  31 January 2011

Anja Hanisch-Blicharski
Affiliation:
anja.hanisch@uni-due.de, University of Duisburg-Essen, Faculty of Physics, Duisburg, Germany
Boris Krenzer
Affiliation:
boris.krenzer@uni-due.de, University of Duisburg-Essen, Faculty of Physics, Duisburg, Germany
Simone Möllenbeck
Affiliation:
simone.moellenbeck@uni-due.de, University of Duisburg-Essen, Faculty of Physics, Duisburg, Germany
Manuel Ligges
Affiliation:
manuel.ligges@uni-due.de, University of Duisburg-Essen, Faculty of Physics, Duisburg, Germany
Ping Zhou
Affiliation:
ping.zhou@uni-due.de, University of Duisburg-Essen, Faculty of Physics, Duisburg, Germany
Martin Kammler
Affiliation:
martin.kammler@uni-due.de, University of Duisburg-Essen, Faculty of Physics, Duisburg, Germany
Michael Horn-von Hoegen
Affiliation:
horn-von-hoegen@uni-due.de, University of Duisburg-Essen, Faculty of Physics, Duisburg, Germany
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Abstract

With time resolved ultrafast electron diffraction the cooling process across the interface between a thin film and the underlying substrate was studied after excitation with short laser pulses. From the exponential decay of the surface temperature evolution a thermal boundary conductance of 1430 W/(cm2K) is determined for a 9.7 nm thin Bi(111) film on Si(111). A linear dependence between laser fluence and initial temperature rise was measured for film-thicknesses between 2.5 nm and 34.5 nm. The ratio of initial temperature rise and laser fluence for different film-thicknesses is compared to a model taking multilayer optics into account. The data agree well with this model.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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