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Vertical Transport Properties of GaN Schottky Diodes Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  03 September 2012

M. Misra ,
A.V. Sampath  and
T.D. Moustakas
M. Misra
Affiliation:
Department of Electrical Engineering and the Photonics Center, Boston University, MA 02215
A.V. Sampath
Affiliation:
Department of Electrical Engineering and the Photonics Center, Boston University, MA 02215
T.D. Moustakas
Affiliation:
Department of Electrical Engineering and the Photonics Center, Boston University, MA 02215
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Abstract

Lateral and vertical electron transport parameters were investigated in lightly doped n-GaN films, grown by MBE. Diodes were fabricated by forming Schottky barriers on n--GaN films using a mesa-etched vertical geometry. Doping concentrations and barrier heights were determined, from C-V measurements, to be 8-9×1016 cm-3 and 0.95-1.0 eV respectively. Reverse saturation current densities were measured to be in the 1-10times;10-9 A/cm2 range. Using the diffusion theory of Schottky barriers, vertical mobility values were determined to be 950 cm2/V-s. Lateral mobility in films grown under similar conditions was determined by Hall effect measurements to be 150-200 cm2/V-s. The significant increase in mobility for vertical transport is attributed to reduction in electron scattering by charged dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.2
Copyright
Copyright © Materials Research Society 1999

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