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- Characteristics of Deep Centers Observed in n-GaN Grown by Reactive Molecular Beam Epitaxy
- https://doi.org/10.1557/PROC-595-F99W11.84
- Published online: 03 September 2012, F99W11.84
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- Metal Organic Vapor Phase Epitaxy of GaAsN/GaAs Quantum Wells Using Tertiarybutylhydrazine
- https://doi.org/10.1557/PROC-595-F99W3.43
- Published online: 03 September 2012, F99W3.43
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- Growth of Crack-Free Thick AlGaN Layer and its Application to GaN-Based Laser Diode
- https://doi.org/10.1557/PROC-595-F99W6.8
- Published online: 03 September 2012, F99W6.8
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- Comparison Study of Structural and Optical Properties of InxGa1-xN/GaN Quantum Wells with Different in Compositions
- https://doi.org/10.1557/PROC-595-F99W12.7
- Published online: 03 September 2012, F99W12.7
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- Thermal Expansion of GaN at Low Temperatures - a Comparison of Bulk and Homo- and Heteroepitaxial Layers
- https://doi.org/10.1557/PROC-595-F99W5.7
- Published online: 03 September 2012, F99W5.7
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- Growth of InN by MBE
- https://doi.org/10.1557/PROC-595-F99W3.30
- Published online: 03 September 2012, F99W3.30
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- Simulation of H Behavior in p-GaN(Mg) at Elevated Temperatures
- https://doi.org/10.1557/PROC-595-F99W9.4
- Published online: 03 September 2012, F99W9.4
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- Mg Segregation, Difficulties of P-Doping in GaN
- https://doi.org/10.1557/PROC-595-F99W9.7
- Published online: 03 September 2012, F99W9.7
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- High Reflectance III-Nitride Bragg Reflectors Grown by Molecular Beam Epitaxy
- https://doi.org/10.1557/PROC-595-F99W1.8
- Published online: 03 September 2012, F99W1.8
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- Characteristics of Ti/Pt/Au Ohmic Contacts on p-type GaN/AlxGa1-xN Superlattices
- https://doi.org/10.1557/PROC-595-F99W10.3
- Published online: 03 September 2012, F99W10.3
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- A Tem study of GaN Grown by ELO on (0001) 6H-SiC
- https://doi.org/10.1557/PROC-595-F99W2.5
- Published online: 03 September 2012, F99W2.5
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- Emission Enhancement of GaN/AlGaN Single-Quantum-Wells Due to Screening of Piezoelectric Field
- https://doi.org/10.1557/PROC-595-F99W11.32
- Published online: 03 September 2012, F99W11.32
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- Carrier Dynamics Studies of Thick GaN Grown by HVPE
- https://doi.org/10.1557/PROC-595-F99W11.47
- Published online: 03 September 2012, F99W11.47
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- Fabrication and Characterization of InGaN Nano-scale Dots for Blue and Green LED Applications
- https://doi.org/10.1557/PROC-595-F99W11.74
- Published online: 03 September 2012, F99W11.74
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- Vertical Transport Properties of GaN Schottky Diodes Grown by Molecular Beam Epitaxy
- https://doi.org/10.1557/PROC-595-F99W11.2
- Published online: 03 September 2012, F99W11.2
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- Comparative Study of Structural Properties and Photoluminescence in InGaN Layers with a High in Content
- https://doi.org/10.1557/PROC-595-F99W11.38
- Published online: 03 September 2012, F99W11.38
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- Probing Nitride Thin Films in 3-Dimensions using a Variable Energy Electron Beam
- https://doi.org/10.1557/PROC-595-F99W5.10
- Published online: 03 September 2012, F99W5.10
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- Activation of Beryllium-Implanted GaN by Two-Step Annealing
- https://doi.org/10.1557/PROC-595-F99W3.82
- Published online: 03 September 2012, F99W3.82
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- Surface Morphology of GaN: Flat Versus Vicinal Surfaces
- https://doi.org/10.1557/PROC-595-F99W3.29
- Published online: 03 September 2012, F99W3.29
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- Optical Spectroscopy of Ingan Epilayers in the Low Indium Composition Regime
- https://doi.org/10.1557/PROC-595-F99W11.41
- Published online: 03 September 2012, F99W11.41
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