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Fabrication and Characterization of InGaN Nano-scale Dots for Blue and Green LED Applications

Published online by Cambridge University Press:  03 September 2012

K.S. Kim ,
C.-H. Hong ,
W.-H. Lee ,
C.S. Kim ,
O.H. Cha ,
G.M. Yang ,
E.-K. Suh ,
K.Y. Lim ,
H.J. Lee  and
H.K. Cho
...Show all authors
K.S. Kim
Affiliation:
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
C.-H. Hong
Affiliation:
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
W.-H. Lee
Affiliation:
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
C.S. Kim
Affiliation:
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
O.H. Cha
Affiliation:
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
G.M. Yang
Affiliation:
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
E.-K. Suh
Affiliation:
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
K.Y. Lim
Affiliation:
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
H.J. Lee
Affiliation:
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
H.K. Cho
Affiliation:
Department of Materials Science and Engineering, KAIST, 373-1 Kusong-Dong, Yusong-gu, Taejon 305-701, Korea
J.Y. Lee
Affiliation:
Department of Materials Science and Engineering, KAIST, 373-1 Kusong-Dong, Yusong-gu, Taejon 305-701, Korea
J.M. Seo
Affiliation:
Department of Science and Technology, Chonbuk National University, Chonju 561-756, Korea
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Abstract

Thin layers of InGaN were grown by metalorganic chemical vapor deposition and characterized with atomic force microscopy and high-resolution transmission electron microscopy. InGaN deposited on GaN exhibits a Stranski-Krastanov growth mode, including 2D wetting layer and 3D self-assembled quantum dots. Besides, we observed that the formed InGaN nano-scale dots have a trapezoidal shape with a {1-102} facet with respect to (0002) surface. Visible spectral range from UV to green was easily obtained by changing InGaN quantum well thickness up to 2.3 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.74
Copyright
Copyright © Materials Research Society 1999

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