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Role of Arsenic Hexagonal Growth-Suppression on a Cubic GaNAs Growth Using Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  03 September 2012

S. Yoshida ,
T. Kimura ,
J. Wu ,
J. Kikawa ,
K. Onabe  and
Y. Shiraki
S. Yoshida
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan
T. Kimura
Affiliation:
Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8654, Japan
J. Wu
Affiliation:
Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8654, Japan
J. Kikawa
Affiliation:
Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan
K. Onabe
Affiliation:
Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8654, Japan
Y. Shiraki
Affiliation:
Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
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Abstract

The hexagonal domain suppression-effects in cubic-GaNAs grown by metalorganic chemical-vapor deposition (MOCVD) is reported. A thin buffer layer (20 nm) was first grown on a substrate at 853 K using trimethylgallium and dimethylhydrazine (DMHy), and GaNAs samples were grown at different AsH3 flow rates (0 ∼ 450 µmol/min) at 1193 K. As a result, three types of surface morphologies were obtained: the first was a smooth surface (AsH3 = 0 µmol/min); the second was a mirrorlike surface having small and isotropic grains (AsH3 : 45 ∼ 225 µmol/min ); and the third involved threedimensional surface morphologies (above 450 µmol/min of AsH3 flow rate). Furthermore, it was confirmed using X-ray diffraction that the mixing ratio of hexagonal GaNAs in cubic GaNAs decreased with an increase of the AsH3 flow rate. We could obtain GaNAs having a cubic component of above 85% at AsH3 flow rates above 20 µmol/min. Therefore, the MOCVD growth method using AsH3 and DMHy was mostly effective for suppressing hexagonal GaNAs. It was observed that the photoluminescence intensity of GaNAs was decreased with increase of arsine flow rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W3.41
Copyright
Copyright © Materials Research Society 1999

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