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Alx Ga1-x as Growth by OMVPE Using Trimethylamine Alane

Published online by Cambridge University Press:  25 February 2011

W. S. Hobson ,
C. R. Abernathy ,
S. J. Pearton  and
T. D. Harris
W. S. Hobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
C. R. Abernathy
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
T. D. Harris
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

We have investigated the growth of Alx Gal-xAs (0.1 ≤ x ≤ 1) by organometallic vapor phase epitaxy using trimethylamine alane (TMAA1) as the aluminum precursor. A low pressure (30 Torr) reactor was used with hydrogen as the carrier gas. At the high gas velocities (> 1 m · s-1) employed there was no visible deposition upstream of the substrate. AIGaAs epilayers with featureless surface morphology could be obtained over the entire range of composition. The layers exhibited very strong room-temperature photoluminescence and excellent compositional uniformity (x = 0.235 ± 0.002 over a 40 mm diameter). A comparison was made between the electrical and optical characteristics of AlGaAs grown with either trimethylgallium (TMGa) or triethylgallium (TEGa). The hole concentration of the layers grown using TMGa was significantly higher than that with TEGa (e.g., 6–7 × 1017 cm-3 vs. 1 × 1016 cm-3) for the same TMAA1 and AsH3 mole fractions. High-purity AlGaAs was achieved with TMAAl and TEGa at higher AsH3 flow rates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 189
Copyright
Copyright © Materials Research Society 1991

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References

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