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Arsenic Implant Activation and Redistribution in P-Type Silicon Induced by Pulsed Electron Beam Annealing

Published online by Cambridge University Press:  15 February 2011

D. Barbierf ,
M. Baghdadi ,
A. Laugier  and
A. Cachard
D. Barbierf
Affiliation:
Laboratoire de Physique de la Matière, Institut National des Sciences Appliquées de Lyon, 20 Avenue Albert Einstein 69621 Villeurbanne Cedex (France)
M. Baghdadi
Affiliation:
Laboratoire de Physique de la Matière, Institut National des Sciences Appliquées de Lyon, 20 Avenue Albert Einstein 69621 Villeurbanne Cedex (France)
A. Laugier
Affiliation:
Laboratoire de Physique de la Matière, Institut National des Sciences Appliquées de Lyon, 20 Avenue Albert Einstein 69621 Villeurbanne Cedex (France)
A. Cachard
Affiliation:
Département de Physique des Maté;riaux, Université; Claude Bernard-Lyon I 43, Boulevard du 11 Novembre 1918, 69622 Villeurbanne Cedex (France)
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Abstract

In this work Pulsed Electron Beam Annealing has been used to Sctivaye As implanted in (100) and (111) silicon (140 keV- 1015 cm−2 ). With a selected electron beam energy deposition profile excellent regrowth layer quality and As activation has been obtained in the 1.2–1.4 J/cm2 fluence range. As redistribution is conistent with the melting model assuming a diffusivity of 10−4 cm2/s in liquid silicon. As losses might slightly reduce the carrier concentration near the surface in the case of (100) silicon. However a shallow and highly active N+ layer have been achieved with optimized PEBA conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 419
Copyright
Copyright © Materials Research Society 1983

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References

REFERENCES

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