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Characterization of Diamond Amorphized by Ion Implantation
Published online by Cambridge University Press: 25 February 2011
Abstract
Single crystal diamond has been implanted at 1 MeV with 2×1020 Ar/m2. Rutherford backscattering spectrometry in a channeled geometry revealed a broad amorphized region underlying a thin, partially crystalline layer. Raman spectroscopy disclosed modifications in the bonding characteristic of the appearance of non-diamond carbon. The complementary nature of the two analysis techniques is demonstrated. The Knoop hardness of the implanted diamond was reduced by implantation.
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- Copyright © Materials Research Society 1993
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