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A comparison of in situ As doping with ex situ CdCl2 treatment of CdTe solar cells

Published online by Cambridge University Press:  01 February 2011

Vincent Barrioz ,
Rachael L. Rowlands ,
Eurig W. Jones ,
Stuart J. C. Irvine ,
Guillaume Zoppi  and
Ken Durose
Vincent Barrioz
Affiliation:
Department of Chemistry, University of Wales, Bangor, Gwynedd LL57 2UW, UK
Rachael L. Rowlands
Affiliation:
Department of Chemistry, University of Wales, Bangor, Gwynedd LL57 2UW, UK
Eurig W. Jones
Affiliation:
Department of Chemistry, University of Wales, Bangor, Gwynedd LL57 2UW, UK
Stuart J. C. Irvine
Affiliation:
Department of Chemistry, University of Wales, Bangor, Gwynedd LL57 2UW, UK
Guillaume Zoppi
Affiliation:
Department of Physics, University of Durham, Science Laboratories, South Road, Durham DH1 3LE
Ken Durose
Affiliation:
Department of Physics, University of Durham, Science Laboratories, South Road, Durham DH1 3LE
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Abstract

A comparison has been made of MOCVD grown CdTe/CdS solar cells processed either by ex situ annealing with CdCl2 or doping with arsenic, in situ, together with various optional anneals. A materials comparison was made of both routes using Jsc measurements on arrays of gold contacts to the CdTe. The Jsc increased from around 1 mA cm-2 for undoped and unannealed layers to a range of 25-30 mA cm-2 for CdCl2 annealed layers. In situ arsenic doping resulted in Jsc values up to 18 mA cm-2. The annealing characteristics were very different for these films, compared with the CdCl2 annealed films, with annealing at 500°C dramatically reducing the Jsc. Only annealing under nitrogen at 400°C produced an improvement in Jsc and further evidence from SIMS analysis suggests that hydrogen passivation of the arsenic dopant may have a significant effect on the dopant activity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 865: Symposium F – Thin-Film Compound Semiconductor Photovoltaics , 2005 , F3.4
Copyright
Copyright © Materials Research Society 2005

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