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Control of the Initial Stage of Ge Overgrowth on CaF2/Si Structures by Electron Beam Exposure
Published online by Cambridge University Press: 25 February 2011
Abstract
The initial stage of Ge overgrowth on CaF2/Si structures was controlled by electron beam (e-beam) exposure through a room-temperature-deposited thin Ge layer on CaF2. It was found that the island growth of Ge was prevented in the e-beam exposed region and the crystalline quality and the surface flat-ness of the Ge film were much improved. From several experimental results, a growth model that e-beam dissociates the surface F atoms of CaF2 and improves the wettability between Ge and CaF2 is proposed.
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- Copyright © Materials Research Society 1987
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