No CrossRef data available.
Article contents
Correlation of Ingap(001) Surface Structure During Growth and CuptB-Type Bulk Ordering
Published online by Cambridge University Press: 10 February 2011
Abstract
The mechanism causing the CuPtB-type ordering of InGaP grown lattice matched to GaAs was investigated by in-situ reflectance anisotropy spectroscopy (RAS/RDS). Experiments were performed during InGaP growth in metal-organic vapour phase epitaxy (MOVPE). From the experiments it can be concluded that bulk ordering only occurs when InGaP growth is performed under phosphorus-rich (2×1)-like surface conditions. Bulk ordering completely disappears under growth conditions which cause a less-phosphorus-rich (2×4)-like surface dimer configuration.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 2000