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Cross Sectional Transmission Electron Microscopy Study of Obliquely Evaporated Silicon Oxide thin Films

Published online by Cambridge University Press:  25 February 2011

A. Barna ,
O. Geszti ,
L. Gosztola  and
E. Seyfried
A. Barna
Affiliation:
Research Institute for Technical Physics of the Hungarian Academy of Sciences, Budapest, P.O.Box 76, H-1325 Hungary
O. Geszti
Affiliation:
Research Institute for Technical Physics of the Hungarian Academy of Sciences, Budapest, P.O.Box 76, H-1325 Hungary
L. Gosztola
Affiliation:
Research Institute for Technical Physics of the Hungarian Academy of Sciences, Budapest, P.O.Box 76, H-1325 Hungary
E. Seyfried
Affiliation:
Enterprise for Microelectronics, Budapest, P.O.Box 21, H-1325 Hungary
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Abstract

The columnar structure in obliquely evaporated silicon oxide layers was investigated by transmission electron microscope (TEM). For TEM studies of these layers, samples were made by low angle ion-beam thinning of cross-sections, the planes of which were determined by the normal of the film and the direction of evaporation. Increasing the angle of evaporation from 5° to 30° (measured from the plane of the substrate), a change from a well–defined columnar structure to a striated structure was observed, for layers evaporated both under “low-rate” and “high-rate” conditions. There is a clear-cut dependence of the orientation of columns (αc) upon the angle of evaporation (α), however deviating from the “tangent rule” (tanαc=2tanα).

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 61: Symposium P – Defects in Glasses , 1985 , 367
Copyright
Copyright © Materials Research Society 1986

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