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Deposition of GaN Films on Glass Substrate and Its Application to UV Electroluminescent Devices
Published online by Cambridge University Press: 11 February 2011
Abstract
GaN films were deposited on glass substrates using a compound-source molecular beam epitaxy technique. Electroluminescent devices with a double-insulator structure were also fabricated using the deposited films. When the devices were operated using a sine-wave voltage, one of the emission peaks was located in the UV spectral region. Introducing a small ammonia flow increased the deposition rate.
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- Copyright © Materials Research Society 2003