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Determination of Film Growth Rate and Surface Roughness using In-Situ Pyrometry

Published online by Cambridge University Press:  10 February 2011

Z. Yina ,
Z. L. Akkerman ,
W. Smith  and
R. Gat
Z. Yina
Affiliation:
Physics Dept., City College of New York, New York, NY 10031
Z. L. Akkerman
Affiliation:
Physics Dept., City College of New York, New York, NY 10031
W. Smith
Affiliation:
Physics Dept., City College of New York, New York, NY 10031
R. Gat
Affiliation:
Applied Science and Technologies, Inc., Woburn, MA 01801
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Abstract

A model for the infrared radiation emitted by a film/substrate system has been developed which includes both the effects of interference in the growing film and of scattering from its rough growth surface. Predictions of the model for the time-dependence of the apparent temperature Tapp of the film/substrate system measured in-situ by both one-color and two-color infrared pyrometers are presented for the case of diamond growth on Si. Using this model, the following information can be obtained from in-situ pyrometric results in real time: the true temperature of the film/substrate system, the instantaneous film growth rate, and the rms surface roughness σ of the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 653
Copyright
Copyright © Materials Research Society 1997

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