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Dielectric Properties of Sintered AIN

Published online by Cambridge University Press:  21 February 2011

R. D. Harris ,
R. C. Enck  and
J. L. Fields
R. D. Harris
Affiliation:
BP Research, Warrensville Research Center, 4440 Warrensville Center Rd., Cleveland, OH 44128, USA.
R. C. Enck
Affiliation:
BP Research, Warrensville Research Center, 4440 Warrensville Center Rd., Cleveland, OH 44128, USA.
J. L. Fields
Affiliation:
BP Research, Warrensville Research Center, 4440 Warrensville Center Rd., Cleveland, OH 44128, USA.
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Abstract

We have initiated a study of the ac electrical properties (dielectric constant and dielectric loss) and the dc resistivity of sintered AIN. For this study, we have used samples purchased commercially as well as samples made by the Carborundum Company, a member of the BP Group. Variations are observed in the room temperature dielectric constant for AIN substrates obtained from different sources. The source-to-source range is from 8.5 to 8.7. This range is lower than the 8.8 to 9.2 that is generally reported in the product literature. Similar source-tosource variations in the room temperature dielectric loss are observed. All of the samples show thermally activated behavior in the dc resistivity. The activation energy observed for all of the samples is similar, EA ∼0.47 eV; however, different pre-exponential factors are apparent. As a result, there are large variations in the measured room temperature resistivities for samples from different sources.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 167: Symposium K – Advanced Electronic Packaging Materials , 1989 , 229
Copyright
Copyright © Materials Research Society 1990

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References

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