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Influence of Internal Electric Fields on the Ground Level Emission of GaN/AlGaN Multi-Quantum Wells

Published online by Cambridge University Press:  03 September 2012

A. Bonfiglio ,
M. Lomascolo ,
G. Traetta ,
R. Cingolani ,
A. Di Carlo ,
F. Della Sala ,
P. Lugli ,
A. Botchkarev  and
H. Morkoc
A. Bonfiglio
Affiliation:
INFM-Dipartimento di Ingegneria Elettrica ed Elettronica, Università di Cagliari, Italy
M. Lomascolo
Affiliation:
CNR-IME Istituto per lo studio di nuovi Materiali per l'Elettronica, Lecce, Italy
G. Traetta
Affiliation:
INFM- Dipartimento di Ingegneria dell'Innovazione, Università di Lecce, Italy
R. Cingolani
Affiliation:
INFM- Dipartimento di Ingegneria dell'Innovazione, Università di Lecce, Italy
A. Di Carlo
Affiliation:
Dipartimento di Ingegneria Elettronica, Università di Roma “TorVergata”, Italy
F. Della Sala
Affiliation:
Dipartimento di Ingegneria Elettronica, Università di Roma “TorVergata”, Italy
P. Lugli
Affiliation:
Dipartimento di Ingegneria Elettronica, Università di Roma “TorVergata”, Italy
A. Botchkarev
Affiliation:
Electronic Engineering, Virginia Commonwealth University, Richmond Virginia, USA
H. Morkoc
Affiliation:
Electronic Engineering, Virginia Commonwealth University, Richmond Virginia, USA
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Abstract

The spectroscopic investigation of GaN/AlGaN quantum wells reveals that the emission energy of such structures is determined by four parameters, namely composition, well-width, strain and charge density. The experimental data obtained by varying these parameters are quantitatively explained by an analytic model based on the envelope function formalism which accounts for screening and built-in field, and by a full self-consistent tight-binding model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W12.6
Copyright
Copyright © Materials Research Society 1999

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