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Modification of structure and optical property of ZnO nanowires by Ga ion beam

  • Yao Cheng (a1), Yao Liang (a2), Ming Lei (a3), Siu Kong Hark (a4) and Ning Wang (a5)...
Abstract
Abstract

Based on the focused ion beam (FIB) technology, we have prepared ZnO nanowires containing periodic nano-sized structures by an ultra thin Ga ion beam. ZnO nanowires can keep a good crystal quality after Ga ion bombardment. The cathodoluminescence (CL) spectroscopy study of the Ga-doped ZnO nanowires at low temperatures shows that the Ga doping effect can largely suppress the green emission that may mainly originate from the defects on the surfaces of ZnO nanowires.

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