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Dopant and Strain Dependence of Extended Defect Generation in Silicon by 1-MeV Electron Irradiation

  • Jan Vanhellemont (a1) and Albert Romano-Rodriguez (a2)

Results are presented of an in-situ study of 1-MeV electron irradiation induced {113}-defect generation in silicon with boron, phosphorus or arsenic doped surface layers. By 1-MeV electron irradiation in a high voltage transmission electron microscope, {113}-defects are dorni-nandy formed in areas with a well defined dopant concentration range which depends on the tjpe of dopant atom, the irradiation temperature and fluence and the sample thickness. The observations for samples with boron and phosphorus concentration profiles are compared with published data on electron irradiation induced ( 113}-defect formation in uniformly doped silicon. In the present paper first results on heavily arsenic doped silicon are presented. It is shown that ihe observed dopant dependence of the {113}-defect generation can be understood on the basis of known point defect reactions. A few irradiation experiments are also performed on a local isolation structure illustrating for the first time the influence of localised tensile and compressive strain fields on {113} -defect nucleation.

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