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Dopant Effects On The Kinetics Of Formation Of Platinum Silicides

Published online by Cambridge University Press:  26 February 2011

M. Wittmer ,
P. A. Psaras  and
K. N. Tu
M. Wittmer
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598
P. A. Psaras
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598
K. N. Tu
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598
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Abstract

We have investigated the growth kinetics of platinum suicide compounds on undoped and heavily arsenic doped polycrystalline silicon. The results are compared with published data on the growth kinetics of these suicides on other silicon substrate materials. From this comparison we conclude that dopants and the microstructure of the substrate material do not affect the activation energy of the growth kinetics which means that the growth mechanism of these suicides is not altered. Only the preexponential factor is lowered in some cases, pointing to a slowing of the speed of growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54 , 1985 , 73
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Wittmer, M., J. Appl. Phys. 54, 5081 (1983)Google Scholar
2. Takai, H., Psaras, P.A. and Tu, K.N., J. Appl. Phys. (in press)Google Scholar
3. Nemanich, R.J., Thompson, M.J., Jackson, W.B., Tsai, C.C., and Stafford, B.L., J. Vac. Sci. Technol. B 1, 519 (1983)Google Scholar
4. Gösele, U. and Tu, K.N., J. Appl. Phys. 53, 3252 (1982)Google Scholar
5. Matz, R., Purtell, R.J., Yokota, Y., Rubloff, G.W., and Ho, P.S., J. Vac. Sci. Technol. A 2, 253 (1984)Google Scholar
6. Graul, J., Glasl, A., and Murrman, H., IEEE J. Solid-State Circuits CS–11, 491 (1976)Google Scholar
7. Ning, T.H. and Isaac, R.D., IEEE Trans. Electron Devices ED–27, 2051 (1980)Google Scholar
8. Wittmer, M., Wetzel, J.T., and Psaras, P.A. (unpublished)Google Scholar
9. Tu, K.N. and Mayer, J.W., Suicide Formation, in Thin Films - Interdiffusion and Reactions, ed. by Poate, J.M., Tu, K.N., and Mayer, J.W., Wiley, New York 1978, p.359 Google Scholar
10. Crider, C.A. and Poate, J.M., Appl. Phys. Lett. 36, 417 (1980)Google Scholar