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Dopant Profile in Silicon Processing

  • Kal. Renganathan Sharma Ph D PE (a1)
Abstract
Abstract

Non-Fickian effects are accounted for in dopant diffusion by the solution of hyperbolic mass wave propagative equation. The surface flux is represented by a modified Bessels composite function of first kind of 0th order in the open interval of τ>x.

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References
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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
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