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Elastic Deformations during Phase Transition in Freestanding BaTiO3 Thin Films.

Published online by Cambridge University Press:  01 February 2011

Jaya P. Nair ,
Natalie Stavitski ,
Ilya Zon ,
Konstantin Gartsman  and
Igor Lubomirsky
Jaya P. Nair
Affiliation:
Department of Materials and Interfaces, Weizmann Institute of Science Rehovot, 76100, Israel
Natalie Stavitski
Affiliation:
Department of Materials and Interfaces, Weizmann Institute of Science Rehovot, 76100, Israel
Ilya Zon
Affiliation:
Department of Materials and Interfaces, Weizmann Institute of Science Rehovot, 76100, Israel
Konstantin Gartsman
Affiliation:
Department of Materials and Interfaces, Weizmann Institute of Science Rehovot, 76100, Israel
Igor Lubomirsky
Affiliation:
Department of Materials and Interfaces, Weizmann Institute of Science Rehovot, 76100, Israel
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Abstract

Elastic deformations during phase transition in freestanding BaTiO3 thin films were investigated. BaTiO3 films were prepared by sol-gel technique or RF magnetron sputtering on silicon substrates, covered by randomly oriented 120 nm thick Al2O3. The as-deposited films were under tensile stress of 100-170 MPa and did not show neither pyroelectric nor piezoelectric properties. Partial substrate removal caused the freestanding films to expand laterally by 0.3-0.5% and corrugate. Dielectric constant of the freestanding films (620±10) was found to be significantly higher than that of the substrate supported films (110±20). The freestanding films showed detectable piezoelectric effect, which indicated that the lateral expansion was originated from the substrate-suppressed cubic-tetragonal phase transition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 718: Symposium D – Perovskite Materials , 2002 , D12.5
Copyright
Copyright © Materials Research Society 2002

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References

[1] Pertsev, N. A. and Koukhar, V. G., Phys. Rev. Lett. 84, 3722 (2000).Google Scholar
[2] Pertsev, N. A., Zembilgotov, A. G., and Tagantsev, A. K., Phys. Rev. Lett. 80, 1988 (1998).Google Scholar
[3] Koukhar, V. G., Pertsev, N. A., and Waser, R., Phys. Rev. B 64, 214103/1 (2001).Google Scholar
[4] Bratkovsky, A. M. and Levanyuk, A. P., Phys. Rev. B 64, 134107/1 (2001).Google Scholar
[5] Roytburd, A. L., Alpay, S. P., Bendersky, L. A., Nagarajan, V., and Ramesh, R., J. Appl. Phys. 89, 553 (2001).Google Scholar
[6] Pamir, S. Alpay and Roytburd, A. L., J. Appl. Phys. 83, 4714 (1998).Google Scholar
[7] Li, S., Eastman, J. A., Li, Z., Foster, C. M., Newnham, R. E., and Cross, L. E., Phys. Lett. A 212, 341 (1996).Google Scholar
[8] Shaoping, L., Eastman, J. A., Vetrone, J. M., Foster, C. M., Newnham, R. E., and Cross, L. E., Jpn. J. Appl. Phys. 1. 36, 5169 (1997).Google Scholar
[9] Frey, M. H. and Payne, D. A., Appl. Phys. Lett. 63, 2753 (1993).Google Scholar
[10] Bihari, B., Kumar, J., Stauf, G. T., Buskirk, P. C. Van, and Seong, H. Cheol, J. Appl. Phys. 76, 1169 (1994).Google Scholar
[11] Yu, A. Boikov and Claeson, T., J. Appl. Phys. 89, 5053 (2001).Google Scholar
[12] Streiffer, S. K., Basceri, C., Parker, C. B., Lash, S. E., and Kingon, A. I., J. Appl. Phys. 86, 4565 (1999).Google Scholar
[13] Shaw, T. M., Suo, Z., Huang, M., Liniger, E., Laibowitz, R. B., and Baniecki, J. D., Appl. Phys. Lett. 75, 2129 (1999).Google Scholar
[14] Jun, S., Sung, K. Young, Lee, J., and Woon, K. Young, Appl. Phys. Lett. 78, 2542 (2001).Google Scholar
[15] Romanov, A. E., Pompe, W., and Speck, J. S., J. Appl. Phys. 79, 4037 (1996).Google Scholar
[16] Desu, S. B., J. Elecrochem. Soc. 140, 2981 (1993).Google Scholar
[17] Ray, J. and Hing, P., J. Appl. Phys. 88, 1008 (2000).Google Scholar
[18] Kuwabara, M., Takahashi, S., and Kuroda, T., Appl. Phys. Lett. 62, 3372 (1993).Google Scholar
[19] Lubomirsky, I., Chang, D. T., and Stafsudd, O. M., J. Appl. Phys. 85, 6690 (1999).Google Scholar
[20] Dazzi, A., Gueldry, A., Maglione, M., Sibillot, P., Mathey, P., and Jullien, P., Europ. Phys. J. Appl. Phys. 9, 181 (2000).Google Scholar
[21] Nam-Yang, L., Sekine, T., Ito, Y., and Uchino, K., Jpn. J. Appl. Phys. 1. 33, 1484 (1994).Google Scholar
[22] Cheng-Chung, L., Jin-Cherng, H., and Daw-Heng, W., Appl. Surface Sci. 171, 151 (2001).Google Scholar
[23] Stoney, G. G., Proc. R. Soc. London A82, 172 (1909).Google Scholar
[24] Kovacs, G. T. A., Micromachined Transducers Sourcebook, 1 ed. (WCB &McGraw Hill, NY, 1999).Google Scholar
[25] Pertsev, N. A., Zembilgotov, A. G., Hoffmann, S., Waser, R., and Tagantsev, A. K., J. Appl. Phys. 85, 1698 (1999).Google Scholar