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Enhanced Interdiffusion Effects in Compound Semiconductors
Published online by Cambridge University Press: 26 February 2011
Abstract
This paper reviews the principal processes involved in the enhanced interdiffusion of elements across interfaces between two III-V compound semiconductors. Implantation enhanced interdiffusion effects in GaAs-Gal−xAlxAs are compared for single Quantum Well structures and Superlattice structures. Measurements indicate a marked difference in the annealing and enhanced interdiffusion kinetics between these 2 types of structures.
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- Copyright © Materials Research Society 1988