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Epitaxial Perovskite LaVO3/(Ba,Sr)TiO3/(Pb,La)(Zr,Ti)O3/(La,Sr)CoO3 Heterostructures for Ferroelectric Field Effect Memory Devices

Published online by Cambridge University Press:  01 February 2011

Woong Choi  and
Tim Sands
Woong Choi
Affiliation:
Department of Materials Science & Engineering, University of California, Berkeley, CA 94720
Tim Sands
Affiliation:
Department of Materials Science & Engineering, University of California, Berkeley, CA 94720
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Abstract

The ferroelectric field effect was demonstrated in epitaxial perovskite LaVO3/(Ba,Sr)TiO3/(Pb,La)(Zr,Ti)O3/(La,Sr)CoO3 heterostructures grown on (001) SrTiO3 single crystal substrates by pulsed laser deposition. A high degree of c-axis orientation and strong in-plane texture revealed by x-ray diffraction indicated the epitaxial crystallographic relationships between the layers. The heterostructure showed optimal ferroelectric hysteresis with remanent polarizations over 30 μC/cm2. The capacitance measurement as a function of voltage coupled with the measurement of channel resistance revealed the formation of a depletion layer in the semiconducting LaVO3. A ratio of ON- to OFF-state channel resistance of up to 2.5 was observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 718: Symposium D – Perovskite Materials , 2002 , D9.1
Copyright
Copyright © Materials Research Society 2002

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