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Evaluation of Silicon Carbide Formed with a Single Precursor of Di-Tert-Butylsilane

Published online by Cambridge University Press:  25 February 2011

Sing-Pin Tay ,
J. P. Ellul ,
Susan B. Hewitt ,
N. G. Tarr  and
A. R. Boothroyd
Sing-Pin Tay
Affiliation:
Northern Telecom Electronics Ltd., 185 Corkstown Rd., Nepean, Ontario, Canada K2H 8V4
J. P. Ellul
Affiliation:
Northern Telecom Electronics Ltd., 185 Corkstown Rd., Nepean, Ontario, Canada K2H 8V4
Susan B. Hewitt
Affiliation:
Northern Telecom Electronics Ltd., 185 Corkstown Rd., Nepean, Ontario, Canada K2H 8V4
N. G. Tarr
Affiliation:
Northern Telecom Electronics Ltd., 185 Corkstown Rd., Nepean, Ontario, Canada K2H 8V4
A. R. Boothroyd
Affiliation:
Northern Telecom Electronics Ltd., 185 Corkstown Rd., Nepean, Ontario, Canada K2H 8V4
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Abstract

A low temperature process of silicon carbide deposition using the pyrolysis of di-tert-butylsilane has been explored for formation of emitter structures in silicon heterojunction bipolar transistors. Near stoichiometric amorphous silicon carbide films were achieved at 775°C. Doping and annealing of these films resulted in resistivity as low as 0.02 ohm-cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 525
Copyright
Copyright © Materials Research Society 1992

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References

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