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Fabrication and Characterization of Cold Electron Emitter Based on Nanocrystalline Silicon Dots
Published online by Cambridge University Press: 17 March 2011
Abstract
A cold electron emitter has been made from nanocrystalline silicon (nc-Si) dots. Nc-Si dots are formed in the gas phase by very-high-frequency (VHF) plasma enhanced chemical vapor deposition (CVD). Electrons, accelerated by electric field, are ballistically transported through nc-Si and SiO2, then extracted into vacuum. Electron emission efficiency is optimized through varying nc-Si film thickness, surface roughness, and by short thermal oxidation.
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- Copyright © Materials Research Society 2001
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