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Ferroelectric Properties of II-VI Type Semiconducting Thin Films on Si(100)

Published online by Cambridge University Press:  10 February 2011

Y. Hotta ,
H. Tabata  and
T. Kawai
Y. Hotta
Affiliation:
ISIR-Sanken, Osaka University, 8–1 Mihogaoka, Ibaraki, Osaka 567–0047, Japan
H. Tabata
Affiliation:
tabata@sanken. osaka-u.ac.jp
T. Kawai
Affiliation:
ISIR-Sanken, Osaka University, 8–1 Mihogaoka, Ibaraki, Osaka 567–0047, Japan
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Abstract

We have demonstrated the presence of ferroelectric properties in non-oxide (II-VI type semiconductor) ferroelectric thin films, such as (Zn,Cd)Te, (Zn,Cd)Se and (Zn,Cd)S (thickness: 3000–5000 Å). They have shown the ferroelectric hysteresis feature with memory windows of 0.2V, 0.3V and 0.8V, respectively. The materials design for getting the ferroelectric nature is as follows: when the size of the replaced atom is smaller than the host atom, then the substituent atoms can occupy off-centered positions, thus locally induce electric dipoles, thereby leading to ferroelectric behavior. These II-VI wide gap semiconducting ferroelectric films will open the door for new memory devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 475
Copyright
Copyright © Materials Research Society 2000

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