The preparation of ferroelectric and high dielectric perovskite materials, which is performed at high temperature (550–750°C) in oxidizing environments, provides strong limitations on the choice of electrode materials which have to be used for integration with semiconductor devices. To minimize interdiffusion and oxidation reactions, a diffusion barrier must be placed between Si substrate and electrode material (Pt, lrO2, RuO2.…). Ti1-xAlxN thin films, deposited by reactive sputtering, are promising materials as electrically conductive layers and robust diffusion barriers. The stability of these films has been investigated at conditions typically used for crystallization of perovskite dielectrics. Films with various Al composition (x=0, 0.1, 0.2 and 0.4) have therefore been annealed by RTA (rapid thermal annealing) in 18O2 at 550–750°C. The concentration depth profiles of both 18O and 27A1 were measured before and after the RTA treatments via the narrow resonances of 18O(p,α)15N at 151 keV (fwhm=100 eV) and 27Al(p,γ)28Si at 992 keV (fwhm=100 eV). Al incorporation in the films reduces oxide growth especially at high annealing temperatures. The Al excitation curves indicate a uniform Al content for as deposited Ti1−xAlxN, and reveal Al diffusion to the surface during oxidation which indicates the formation of an Al rich oxide layer at the Ti1-xAlxN surface.