Article contents
The Formation of Tin-Encapsulated Silver Films by Nitridation of Silver-refractory metal alloys in NH3
Published online by Cambridge University Press: 15 February 2011
Abstract
Encapsulated Ag(Ti) films on oxidized silicon were obtained by nitridation of Ag(19 at.% Ti) alloys in NH3 at temperatures between 400-700°C for various times. Upon annealing Ti segregates to the surface and alloy/SiO2 interface to form a TiN(O) surface layer and a TiO/Ti5Si3 interfacial bilayer structure. Resistivity values of 2.5 μΩ-cm were measured in the encapsulated Ag alloys. The results suggest that resistivity is controlled by the residual Ti concentration.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1996
References
- 1
- Cited by