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High Carrier Concentration Improved N-Type SiGe/GaP Alloys
Published online by Cambridge University Press: 15 February 2011
Abstract
SiGe alloys have been fabricated with the hiqghest carrier concentrations achieved to date. Values in excess of 4.0 × 1020 have been observed. The thermoelectric behavior of these samples has been characterized, both in the as-pressed state and as a function of 3anneal time and temperature. Figures-of-merit between 0.85 and 0.90 × 10−3 K−1 have been reproducibly achieved. Further improvements will be achieved by reducing the carrier concentration.
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- Copyright © Materials Research Society 1991