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High Energy Heavy Ions Irradiation of Thermal SiO2 Films on Si

Published online by Cambridge University Press:  25 February 2011

Abdelilah Slaoui ,
Marie-Claude Busch ,
Eric Doorhyee ,
Marcel Toulemonde  and
Paul Siffert
Abdelilah Slaoui
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n°292), BP 20, F-67037 Strasbourg Cedex 2, France
Marie-Claude Busch
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n°292), BP 20, F-67037 Strasbourg Cedex 2, France
Eric Doorhyee
Affiliation:
CIRIL, BP 5133, F-14040 Caen Cedex, France
Marcel Toulemonde
Affiliation:
CIRIL, BP 5133, F-14040 Caen Cedex, France
Paul Siffert
Affiliation:
Centre de Recherches Nucléaires (IN2P3), Laboratoire PHASE (UPR du CNRS n°292), BP 20, F-67037 Strasbourg Cedex 2, France
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Abstract

In this work, we present experimental observations of radiation damage in thermal SiO2 films grown on silicon, induced by energetic (> 0.2 GeV) O, Ni and Xe ions bombardement. The structural analysis of the SiO2 films, using infrared absorption spectroscopy, ellipsometry and etch rate measurements, points to atomic displacements, broken and strained Si-O bonds induced by irradiation. We have also estimated the damage production cross section and the track radii of the ions in the amorphous SiO2 films as a function of the electronic stopping power.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 141
Copyright
Copyright © Materials Research Society 1993

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References

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