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HIGH FREQUENCY TOP-GATED GRAPHENE RF AMBIPOLAR FETs USING LARGE-AREA CVD GRAPHENE AND ADVANCED DIELECTRICS

  • Osama M. Nayfeh (a1) and Madan Dubey (a1)
Abstract
ABSTRACT

Ambipolar top-gated field effect transistors (FETs) based on large area Cu catalyzed CVD-grown monolayer graphene interfaced to advanced dielectrics have been constructed and examined both for their material and electrical qualities. Interfacing of the graphene with novel insulators/substrates could be tailored for the particular application and provide for enhanced device functionality. In contrast to graphene FETs using SiO2-based top-gate dielectric, which show asymmetric electron/hole mobility (with larger hole mobility), and Dirac point shifted to positive levels, FETs constructed using advanced AlN show Dirac point almost near neutral levels and near symmetric electron/hole mobility. The DP is shifted likely due to compensation of the intrinsic p-type doping by n-type doping introduced by the AlN deposition and potentially via a contribution of polarization-induced carrier density. Finally, we demonstrate a top-gated graphene FET with the first observation of RF operation with GHz cut-off frequency based on large area CVD graphene.

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8. O.M. Nayfeh , S. Kilpatrick , and M. Dubey , in IEEE Device Research Conference, pp. 8384, 2010

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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
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