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High-Quality Gate-Oxide Films for Low-Temperature Fabricated Poly-Si TFTs

Published online by Cambridge University Press:  25 February 2011

Shiro Suyama ,
Akio Okamoto ,
Seiiti Shirai  and
Tadashi Serikawa
Shiro Suyama
Affiliation:
Applied Electronics Labs., Nippon Telegraph and Telephone Corp., 9-11 Midori-cho, 3-chome Musashino-shi, Tokyo 180, Japan
Akio Okamoto
Affiliation:
Applied Electronics Labs., Nippon Telegraph and Telephone Corp., 9-11 Midori-cho, 3-chome Musashino-shi, Tokyo 180, Japan
Seiiti Shirai
Affiliation:
Applied Electronics Labs., Nippon Telegraph and Telephone Corp., 9-11 Midori-cho, 3-chome Musashino-shi, Tokyo 180, Japan
Tadashi Serikawa
Affiliation:
Applied Electronics Labs., Nippon Telegraph and Telephone Corp., 9-11 Midori-cho, 3-chome Musashino-shi, Tokyo 180, Japan
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Abstract

High-quality gate-oxide films for poly-Si TFTs (Thin Film Transistors) are successfully produced by oxygen-argon sputter deposition at a low temperature (200°C). Silicon-oxide films that are sputter-deposited in an oxygen-argon mixture has higher resistivity and breakdown field than films that are sputterdeposited only in argon and thermal oxides grown on poly-Si. Moreover, TFT field-effect mobilities are considerably improved by mixing oxygen into the sputtering gas, resulting in 350 cm2 /V.sec. Subthreshold slope and threshold voltage are also reduced to 5.5 V and 0.8 V/decade. A temperature-dependence measurement of the drain current shows that these improvements in TFT characteristics result from a lowering of the barrier height at the poly-Si grain boundaries, indicating a reduction in the trap density at these boundaries. Results confirm the usefulness of gate-oxide films that are sputter-deposited in an oxygen-argon mixture, for lowtemperature fabricated poly-Si TFTs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 301
Copyright
Copyright © Materials Research Society 1989

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References

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