Skip to main content
×
×
Home

Impact of rapid thermal annealing and hydrogenation on the doping concentration and carrier mobility in solid phase crystallized poly-Si thin films

  • A. Kumar (a1) (a2), P.I. Widenborg (a1) (a2), H. Hidayat (a1) (a2), Qiu Zixuan (a1) and A.G. Aberle (a1) (a2)...
Abstract

The effect of the rapid thermal annealing (RTA) and hydrogenation step on the electronic properties of the n+ and p+ solid phase crystallized (SPC) poly-crystalline silicon (poly-Si) thin films was investigated using Hall effect measurements and four-point-probe measurements. Both the RTA and hydrogenation step were found to affect the electronic properties of doped poly-Si thin films. The RTA step was found to have the largest impact on the dopant activation and majority carrier mobility of the p+ SPC poly-Si thin films. A very high Hall mobility of 71 cm2/Vs for n+ poly-Si and 35 cm2/Vs for p+ poly-Si at the carrier concentration of 2×1019 cm-3 and 4.5×1019 cm-3, respectively, were obtained.

Copyright
References
Hide All
1.Hirshman, W. P., Hering, G. and Schmela, M., Survey on cell and module production 2006, Photon International, March 2007, 136 (2007).
2.Matsuyama, T., et al. ., High-quality polycrystalline silicon thin film prepared by a solid phase crystallization method. Journal of Non-Crystalline Solids, 1996. 198: p. 940944.
3.Keevers, M.J. et al. ., Proc 22nd European Photovoltaic Solar Energy Conf., Milan, 2007 (WIP, Munich, 2007, p. 1783).
4.Baliga, B.J., Morphology of silicon epitaxial layers grown by under cooling of a saturated tin melt. Journal of Crystal Growth, 1977. 41(2): p. 199204.
5.Haberecht, R.R. and Kern, E.L., Semiconductor silicon. 1969: Electronics Division, Electrochemical Society.
6.Gat, Gerzlieyg, L., Gibbons, J.F., Magee, T.J., Peng, J. and Hong, J.D., Appl. Phys. Lett. 33 (1978) 775.
7.Matsuyama, T., et al. ., Preparation of High-Quality n-Type Poly-Si Films by the Solid Phase Crystallization (SPC) Method. Japanese Journal of Applied Physics, 1990. 29(part 1): p. 23272331.
8.Basore, P. A., CSG-1 Manufacturing a new polycrystalline silicon PV technology, proc 4th world conference on Photovoltaic Energy Conversion, Hawaii, 2006, pp. 874876.
9.Hull, R. Properties of crystalline silicon. 1999: Institution of Electrical Engineers.
10.Kitahara, K., et al. ., Correlation between electron mobility and silicon-hydrogen bonding configurations in plasma-hydrogenated polycrystalline silicon thin films. Applied Physics Letters, 1998. 72: p. 2436.
11.Almaggoussi, A., et al. ., Electrical properties of highly boron implanted polycrystalline silicon after rapid or conventional thermal annealing. Journal of applied physics, 1989. 66(9): p. 43014304.
12.Jeanjean, P., et al. ., Dopant activation and Hall mobility in B-and As-implanted polysilicon films after rapid or conventional thermal annealing. Semiconductor science and technology, 1991. 6: p. 1130.
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *
×

Keywords

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed