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Initial Strain Relaxation in S0.91Ge0.09/Si Superlattice Structures via Misfit-Dislocations

Published online by Cambridge University Press:  10 February 2011

J. Leininger ,
G. D. U'ren  and
M. S. Goorsky
J. Leininger
Affiliation:
University of California, Los Angeles, Department of Materials Science and Engineering, Los Angeles, CA 90095-1595
G. D. U'ren
Affiliation:
University of California, Los Angeles, Department of Materials Science and Engineering, Los Angeles, CA 90095-1595
M. S. Goorsky
Affiliation:
University of California, Los Angeles, Department of Materials Science and Engineering, Los Angeles, CA 90095-1595
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Abstract

We addressed the initial strain relaxation of symmetric 95 Å period Si0.91Ge0.09/Si heterostructures grown by ultra-high vacuum chemical vapor deposition on vicinal substrates miscut 2.04° from (001) in a direction 36° from a [110]. Double-axis x-ray topography revealed misfit-dislocation sources in the as-grown samples with an average density of about 60 cm−2, although the distribution of these sites was not homogeneous. The progression of dislocation nucleation and growth was observed during subsequent rapid thermal annealing (800°C, 20s-320s). Physical heterogeneities were identified as dislocation sources, and they gave rise to orthogonal misfit dislocation bundles, which on a macroscopic scale resemble crosses. Upon longer annealing, a more homogeneous distribution of defects was observed without measurable relaxation. These original defects did propagate; however, they did not spur a cross-slip multiplication sequence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 570: Symposium V – Epitaxial Growth , 1999 , 213
Copyright
Copyright © Materials Research Society 1999

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