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In-Situ Tem Characterization of Whiskers on Al Electrodes for Thin-Film Transistors

Published online by Cambridge University Press:  10 February 2011

K. Tsujimoto ,
S. Tsuji ,
H. Saka ,
K. Kuroda ,
H. Takatsuji  and
Y. Suzukip
K. Tsujimoto
Affiliation:
ITES Co. Ltd., Ichimiyake, Yasu-cho, Yasu-gun, Shiga 520-23, Japan.
S. Tsuji
Affiliation:
Display Technology, IBM Japan, Ltd., Shimotsuruma, Yamato-shi, Kanagawa 242, Japan
H. Saka
Affiliation:
Department of Quantum Engineering, Nagoya University, Nagoya 464-01, Japan
K. Kuroda
Affiliation:
Department of Quantum Engineering, Nagoya University, Nagoya 464-01, Japan
H. Takatsuji
Affiliation:
Display Technology, IBM Japan, Ltd., Ichimiyake, Yasu-cho, Yasu-gun, Shiga 520-23, Japan
Y. Suzukip
Affiliation:
Department of Quantum Engineering, Nagoya University, Nagoya 464-01, Japan
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Abstract

The recent attention paid to stress migration of aluminum (Al) electrodes in thin-film transistor liquid crystal display (TFT-LCD) applications indicates that wiring materials with low electrical resistivities are of considerable interest for their potential use in higher-resolution displays. In this paper, we firstly describe how as-grown Al whiskers on Al electrodes fabricated on a LCD-grade glass substrate can be characterized by means of a high-voltage transmission electron microscope (HV-TEM) operated at 1 MV. The whiskers ranging from 300 to 400 nm in diameter are sufficient to be transparent to high-voltage electrons. This allows detailed observation of whisker characteristics such as its morphology and crystallography. In most cases, the as-grown Al whiskers in our study had straight rod shapes, and could be regarded as single crystals. Secondly, we report on the in-situ fabrication and observation of Al whiskers at elevated temperature with the HV-TEM. Since relatively thick TEM samples (up to about 1 mm) can be set on a sample holder in the HV-TEM, various growth stages of Al whiskers can be investigated under various heating conditions. Finally, we demonstrate a TEM sample preparation method for the cross-section of an individual Al whisker, using focused ion beam (FIB) etching. This technique makes it possible to reduce the thickness of an Al whisker close to the root. Both bright- and dark-field TEM images provide nanostructural information on the whisker/Al thin-film interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 421
Copyright
Copyright © Materials Research Society 1997

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