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Investigation of the Trapping Mechanism for Transient Current-Voltage Behavior In CIGSS-Based Solar Cells

Published online by Cambridge University Press:  21 March 2011

Pamela K. Johnson ,
James R. Sites  and
Dale E. Tarrant
Pamela K. Johnson
Affiliation:
Colorado State University, Fort Collins, CO 80523, U.S.A.
James R. Sites
Affiliation:
Colorado State University, Fort Collins, CO 80523, U.S.A.
Dale E. Tarrant
Affiliation:
Siemens Solar Industries, Camarillo, CA 93012, U.S.A.
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Abstract

Some thin-film CIS photovoltaic devices exhibit reversible transient behavior in their electrical properties induced by modestly elevated (70 - 100 °C) temperatures. This paper evaluates changes due to light exposure, thermal exposure, and applied bias in cells fabricated by Siemens Solar Industries (SSI). When a constant bias was maintained across cells subjected to elevated temperatures in the dark, and subsequent moderate- temperature light exposure, there was little reversible transient behavior. When the bias was cycled between zero and open-circuit voltage (VOC), independent of illumination, the fill factor (FF) decreased for zero bias and increased at VOC. Hence, it is the bias rather than photon absorption that drives the transient current-voltage behavior in these cells. Investigations of the relationship between trapping mechanisms and transient behavior using the frequency and temperature dependence of capacitance showed clear cyclic behavior in the trap-response frequency. Trap density profiles were found to be relatively independent of measurement temperature, and the total trap density varied only slightly with the bias cycle.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H5.12
Copyright
Copyright © Materials Research Society 2001

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References

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