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Laser Quality AlGaAs-GaAs Quantum Wells Grown on Low Temperature GaAs

Published online by Cambridge University Press:  15 February 2011

Y. Hwang ,
D. Zhang ,
T. Zhang ,
M. Mytych  and
R. M. Kolbas
Y. Hwang
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
D. Zhang
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
T. Zhang
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
M. Mytych
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
R. M. Kolbas
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911
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Abstract

In this work we demonstrate that photopumped quantum wellheterostructure lasers with excellent optical quality can be grown ontop of a LT GaAs buffer layer by molecular beam epitaxy. Hightemperature thermal annealing of these lasers blue-shifts the laseremission wavelengths but the presence/absence of a LT GaAs layerhad little effect on the overall laser thresholds. Also, to first order itwas not necessary to include an AlAs barrier layer to preventadverse effects (as has been necessary in the gate stack of MESFETs to prevent carrier compensation).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 241 , 1991 , 239
Copyright
Copyright © Materials Research Society 1992

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References

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