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Lateral Diffusion and Capture of Iron in P-Type Silicon
Published online by Cambridge University Press: 26 February 2011
Abstract
The lateral motion of iron impurities was observed and studied in ptype iron contaminated silicon. The lateral diffusion was induced by and then measured using Schottky diodes with a special interdigitated fingers design. Capture of the impurities was done by diffusing to laterally placed dislocation loops formed by a self aligned ion implantation. Lateral changes in Fe concentration were determined using capacitance-voltage and deep level transient spectroscopy.
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- Copyright © Materials Research Society 1995