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Local Bonding in A—Sige Alloy Films

  • G. Lucovsky (a1), R.A. Rudder (a1), J.W. Cook (a1) and S.Y. Lin (a1)

This paper discusses the bonding of hydrogen in a—Si,Ge:H alloy films prepared byreactive magnetron sputtering (RMS). We compare our results for H atom bonding with films produced by: (a) the glow discharge decomposition (GDD) of silane and germane mixtures, and (b) reactive diode sputtering (RDS). We discuss the energy states associated with Si and Ge atom nfeutrat angling bonds in the context of an empirical tight—binding modeL The model places the Ge atom dangling bond state deeper in the gap than the corresponding Si atom defect state. The differences between the electronic properties of GDDand RDS films, and R4S films are explained in terms of the degree of H compensation of Si and Ge atom dangling bonds.

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