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Local junction voltages and radiative ideality factors of a-Si:H solar modules determined by electroluminescence imaging
Published online by Cambridge University Press: 27 June 2013
Abstract
In this contribution, we show that the dominant electroluminescent emission of hydrogenated amorphous silicon (a-Si:H) thin-film solar cells follows a diode law, whose radiative ideality factor nr is larger than one. This is in contrast to crystalline silicon and Cu(In, Ga)Se2 solar cells for which nr equals one. As a consequence, the existing quantitative analysis for the extraction of the local junction voltage Vj(r) from luminescence images fails for a-Si:H solar cells. We expand the existing analysis method, and include the radiative ideality factor nr into the model. With this modification, we are able to determine the local junction voltage Vj(r) for a-Si:H solar cells and modules. We investigated the local junction voltage Vj(r) and the radiative ideality factor nr for both initial and stabilized a-Si:H solar modules. Furthermore, we show that the apparent radiative ideality factor is affected by the spectral sensitivity of the used camera system.
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- Information
- MRS Online Proceedings Library (OPL) , Volume 1536: Symposium A – Film Silicon Science and Technology , 2013 , pp. 105 - 111
- Copyright
- Copyright © Materials Research Society 2013
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