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Low Temperature MOCVD of Oriented PbTiO3 Films on Si(100)

  • H. Chen (a1), B.M. Yen (a1), G.R. Bai (a1), D. Liu (a1) and H.L.M. Chang (a2)...
Abstract
Abstract

Highly oriented PbTiO3 (PT) thin films have been successfully grown on Si(100) using MOCVD technique at as low as 450°C. Titanium isopropoxide, Ti(C3H7O)4, tetraethyl lead, Pb(C2H5 )4, and pure oxygen were chosen as precursor materials in this work. The resulting film chemistry and texture were found to be strongly dependent on Pb/Ti source flow ratio and growth temperature.

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  • EISSN: 1946-4274
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