Hostname: page-component-848d4c4894-5nwft Total loading time: 0 Render date: 2024-05-14T17:29:50.876Z Has data issue: false hasContentIssue false

Material Requirements for a Boron Phosphide Thermal Neutron Counter

Published online by Cambridge University Press:  10 February 2011

T. P. Viles
Affiliation:
Sandia National Laboratories, Livermore, CA 94551-0969
B. A. Brunett
Affiliation:
Sandia National Laboratories, Livermore, CA 94551-0969
H. Yoon
Affiliation:
UCLA Department of Materials Science and Engineering, Los Angeles, CA 90095
J. C. Lund
Affiliation:
Sandia National Laboratories, Livermore, CA 94551-0969
H. Hermon
Affiliation:
Sandia National Laboratories, Livermore, CA 94551-0969
D. Buchenauer
Affiliation:
Sandia National Laboratories, Livermore, CA 94551-0969
K. McCarty
Affiliation:
Sandia National Laboratories, Livermore, CA 94551-0969
M. Clifft
Affiliation:
Sandia National Laboratories, Livermore, CA 94551-0969
D. Dibble
Affiliation:
Sandia National Laboratories, Livermore, CA 94551-0969
R. B. James
Affiliation:
Sandia National Laboratories, Livermore, CA 94551-0969
Get access

Abstract

Electrical characterization (current versus voltage and capacitance versus voltage) of nonstoichiometric amorphous boron phosphide Schottky diodes for neutron detection is presented. These results are incorporated in a Monte Carlo model of detector response to determine material requirements for a boron phosphide neutron counter.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Sze, S. M., Physics of Semiconductor Devices, p. 249, Wiley, New York, (1981).Google Scholar
2. Lund, J. C., Olschner, F., Ahmed, F., and Shah, K. S., Boron Phosphide on Silicon for Radiation Detectors, Mat. Res. Soc. Proc., 162, p.602, (1990).Google Scholar
3. Kumashiro, Y. and Okada, Y., Schottky Barrier Diodes Using Thick, Well-Characterized Boron Phosphide Wafers, Appl. Phys. Lett. 47, p.64, (1985).Google Scholar
4. Ziegler, J. F., Biersack, J. P., and Littmark, U., The Stopping and Range of Ions in Solids, Pergamon, New York. (1985). Available at www.research.ibm.com.ionbeams/SRIM/SRIMTR.HTM.Google Scholar
5. Sakai, E., Nakatani, H., Tatsuyama, C., Takeda, F., Average Energy Needed to Produce an Electron-Hole Pair in GaSe Nuclear Particle Detectors, IEEE Trans. Nuc. Sci., NS–35, p. 85, (1988).Google Scholar
6. Ramo, S., Currents Induced by Electron Motion, Proc. IRE, 27, p. 584, (1939).Google Scholar
7. Radeka, V., Low-Noise Techniques in Detectors, Ann. Rev. Nucl. Part. Sci., 38, p.217, (1988).Google Scholar