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A Microstructural Comparison of Cu(In,Ga)Se2 Thin Films Grown from CuxSe and (In,Ga)2Se3 Precursors

  • Andrew M Gabor (a1), J. R. Tuttle (a1), D. S. Albin (a1), R. Matson (a1), A. Franz (a1), D. W. Niles (a1), M. A. Contreras (a1), A. M. Hermann (a2) and R. Noufi (a1)...
Abstract

We fabricated CulnSe2 and Cu(In,Ga)Se2 thin films by two different pathways using physical vapor deposition. In the first we formed a Cu-Se precursor and then reacted it with a flux of (In,Ga) + Se. These films had large grains but were too rough for optimal device performance. In the other pathway, we first formed a smooth precursor of (In,Ga)2Se3 and then exposed it to a flux of Cu+Se. We overshot the optimal film composition to allow recrystallization of the film by a secondary CuxSe phase. We then consumed the excess CuxSe in a third stage deposition of (In,Ga) + Se. The recrystallization step increased the grain sizes, and the resulting films remained smooth. Photovoltaic solar cells made from these films have produced the highest total-area efficiencies of any non-single-crystal, thin-film solar cell.

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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
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