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Modelling of the oxidation of Suspended Silicon Nanowires
Published online by Cambridge University Press: 01 February 2011
Abstract
The oxidation of suspended Si nanowires is studied under wet and dry conditions. The nanowire characteristics are extracted from Electron Microscopy images. In parallel, the Deal and Grove model is extended to cylindrical geometry. The used model also assumes that stress effects reduce the oxidation rate and predicts the retardation of oxide growth on curved surface, leading to a self-limited process. The model predictions show a good agreement with experiments.
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- Copyright © Materials Research Society 2009