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    Naitoh, Yasuhisa Suga, Hiroshi and Horikawa, Masayo 2011. Physical Model for High-to-Low Resistive Switching of Gold Nanogap Junction. Japanese Journal of Applied Physics, Vol. 50, Issue. 6S, p. 06GF10.


    Naitoh, Yasuhisa Suga, Hiroshi and Horikawa, Masayo 2011. Physical Model for High-to-Low Resistive Switching of Gold Nanogap Junction. Japanese Journal of Applied Physics, Vol. 50, Issue. 6, p. 06GF10.


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  • MRS Proceedings, Volume 997
  • January 2007, 0997-I04-08

New Nonvolatile Memory Effect Showing Reproducible Large Resistance Ratio Employing Nano-gap Gold Junction

  • Yasuhisa Naitoh (a1), Masayo Horikawa (a2) and Tetsuo Shimizu (a3)
  • DOI: http://dx.doi.org/10.1557/PROC-0997-I04-08
  • Published online: 01 February 2011
Abstract
Abstract

A large negative resistance is observed in the I-V characteristics of gold nanogap junction when high-bias voltages are applied. This phenomenon is characteristic behaviour on the nanometre scale; it only occurs for gap widths slightly under 13 nm. Furthermore, this junction exhibits a non-volatile resistance hysteresis when the bias voltage is reduced very rapidly from a high level to around 0 V, and when the bias voltage is reduced slowly. This non-volatile resistance change occurs as a result of changes in the gap width between the metal electrodes, brought about by the applied bias voltage.

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