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New Optical Transition at Thermal Donors in Silicon

Published online by Cambridge University Press:  28 February 2011

J. Weber  and
H. J. Queisser
J. Weber
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart 1, Federal Republic of Germany
H. J. Queisser
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000 Stuttgart 1, Federal Republic of Germany
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Abstract

We detect new luminescence lines in Czochralski-grown silicon after prolonged heat treatments at 450°C. The properties of the new optical transition are well explained by a thermal donor-free hole recombination. From the IR-absorption spectra measured on the same samples, we have evidence for an inhomogeneous distribution of the thermal donors. The spatial fluctuations of the thermal donors appear to be necessary for the new luminescence spectrum to emerge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 147
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

[1] Kaiser, W., Frisch, H.L., Reiss, H., Phys. Rev. 112, 1546 (1958)Google Scholar
[2] Patel, J.R., in Semiconductor Silicon 1981, edid by Huff, H.R., Kriegler, R.J., and Takeishi, Y. (Electrochemical Society, Pennington, 1981), p.89 Google Scholar
[3] Oeder, R., Wagner, P. in “Defects in Semiconductors II”; MRS Symposia Proceedings Vol.14, Mahajan, S., Corbett, J.W., Eds., North Holland 1982, p. 171 Google Scholar
[4] Stavola, M., Lee, K.M., Nabity, J.C., Freeland, P.E. and Kimerling, L.C., Phys. Rev. Lett. 54, 2639 (1985)CrossRefGoogle Scholar
[5] Lee, K.M., Trombetta, J.M. and Watkins, G.D., in Proceedings of the Symposium on Microscopic Identification of Defects in Semiconductors, San Francisco, 1985 (to be published)Google Scholar
[6] Weber, J. and Sauer, R. in “Defects in Semiconductors II”; MRS Symposia Proceedings, Vol.14, Mahajan, S., Corbett, J.W., Eds., North Holland 1982, p.165 Google Scholar
[7] Bebb, H.B. and Williams, E.W. in “Semiconductors and Semimetals”, vol.8, p.181, edited by Willardson, R.K., Beer, A.C., Academic Press, New York/London, 1972 Google Scholar
[8] Weber, J., Schmid, W., and Sauer, R., Phys. Rev. B21, 2401 (1980)CrossRefGoogle Scholar
[9] Wagner, P., Holm, C., Sirtl, E., Oeder, R., Zulehner, W. in “Festkdrperprobleme” (Advances in Solid State Physics), vol.XXIV, p.191, Grosse, P. (ed.), Vieweg, Braunschweig, 1984 Google Scholar
[10] Jgannath, C., Gabrowski, Z.W. and Ramdas, A.K., Phys. Rev. B 23, 2082 (1981)CrossRefGoogle Scholar
[11] Newman, R., Phys. Rev. 103, 103 (1956)Google Scholar