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Non-Contact, Wafer-Scale Deep Level Transient Spectroscopy (DLTS) Based on Surface Photovoltage (SPV)
Published online by Cambridge University Press: 26 February 2011
Abstract
We present a new version of a deep level transient spectroscopy which is suitable for non-contact, non-destructive determination of deep level defects in semiconductor wafers without preparation of metal-semiconductor diodes or p-n junctions.
The method relies on deep level thermal emission measurements by the surface photovoltage (SPV) transient following an optical filling pulse. Non-equilibrium occupation of deep levels is realized within the native surface depletion region by the capture of excess minority carriers. Since the native Schottky-type surface barrier is commonly present on semiconductor surfaces, the approach requires no wafer pre-treatments. Non-contact SPV measurements are realized using a capacitive coupling to the wafer front and the wafer back.
The quantitative principles of the SPV-DLTS approach are discussed using experimental data obtained on GaAs.
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- Copyright © Materials Research Society 1992
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