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Optical Emission Related to Holes Confined in p-Type δ-Doped Layers in GaAs

  • Q.X. Zhao (a1), M. Willander (a1), P.O. Holtz (a2), W. Lu (a3), H. F. Dou (a3), S. C. Shen (a3), G. Li (a4) and C. Jagadish (a4)...

We present an optical investigation of thin Zn-doped GaAs layers embedded in bulk GaAs, by means of stationary optical spectroscopy. The samples were grown by metalorganic vapor phase epitaxy (MOVPE) The concentration of doped Zn acceptors were aimed at 2×1020/cm3 in 4 nm wide doping regions. We observed a novel optical radiative transition (denoted as F-emission) appearing in photoluminescence (PL) spectra below the energy position of the transition between the free electrons and holes bound to acceptors in bulk GaAs. The F emission shows a strong dependence on excitation intensity and temperature. The energy position varies from 1.46 eV to 1.49 eV when the excitation density increases from about 40 mW/cm2 to 23 W/cm2. Our results indicate that this emission is related to the transition between spatially separated electrons and holes. The holes are located in the p-type Zn δ-doped region, while the electrons are located in the undoped GaAs region.

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